Характеристики
RFD16N05SM9A, МОП-транзистор, N Канал, 16 А, 50 В, 47 мОм MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.Полупроводники — ДискретныеТранзисторыМОП-транзисторы