Характеристики
PMFPB8032XP, МОП-транзистор, P Канал + Шоттки, 3 А, 20 В The PMFPB8032XP is a P-channel enhancement-mode small-signal FET using Trench MOSFET technology. It is combined with an ultra-low VF maximum efficiency general application Schottky diode and leadless ultra-thin surface-mount plastic package.
• 1.8V RDS (ON) rated for low-voltage gate drive
• Small and leadless ultra thin SMD plastic package
• Exposed drain pad for excellent thermal conduction
• Integrated ultra low VF MEGA Schottky diode
• -55 to 150 C Junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы