Характеристики
IRGIB7B60KDPBF, БТИЗ транзистор, 12 А, 2.2 В, 39 Вт, 600 В The IRGIB7B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and excellent current sharing in parallel operation.
• Square RBSOA
• Positive VCE (on) temperature coefficient
• Rugged transient performance
• Low EMI
• 10µs Short-circuit capability
Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные