Характеристики
IRG7PH42UPBF, БТИЗ транзистор, 90 А, 1.7 В, 385 Вт, 1.2 кВ The IRG7PH42UPBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
• Low VCE (ON) Trench IGBT technology
• Low switching losses
• Square RBSOA
• 100% of Parts tested for ILM
• Positive VCE (ON) temperature coefficient
• Tight parameter distribution
• High efficiency in a wide range of applications
Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные