Характеристики
IRFU5505PBF, МОП-транзистор, P Канал, 18 А, -55 В, 110 мОм The IRFU5505PBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The straight lead version is for through-hole mounting applications.
• Advanced process technology
• Fast switching
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating
• Halogen-free
Полупроводники — ДискретныеТранзисторыМОП-транзисторы