Характеристики
IRF9Z24SPBF, МОП-транзистор, P Канал, 11 А, -60 В, 280 мОм The IRF9Z24SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast-switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
• Advanced process technology
• -55 to 175 C Operating temperature range
• Fully avalanche rated
• Surface-mount
Полупроводники — ДискретныеТранзисторыМОП-транзисторы