Характеристики
FQP70N10, МОП-транзистор, N Канал, 57 А, 100 В, 23 мОм, 10 В, 4 ВThe FQP70N10 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
• 100% Avalanche tested
• 85nC Typical low gate charge
• 150pF Typical low Crss
Полупроводники — ДискретныеТранзисторыМОП-транзисторы