Характеристики
FDT3N40TF, МОП-транзистор, N Канал, 2 А, 400 В, 2.8 Ом, 10 В, 5 ВThe FDT3N40TF is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor’s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• 100% Avalanche tested
• 4.5nC Typical low gate charge
• 3.7pF Typical low Crss
Полупроводники — ДискретныеТранзисторыМОП-транзисторы