Характеристики
BUK9K6R2-40E, МОП-транзистор, N Канал, 40 А, 40 В The BUK9K6R2-40E is a N-channel dual logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 C rating
• True logic level gate with VGS (th) rating of greater than 0.5V at 175 C
• -55 to 175 C Junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы