Характеристики
BSH207,135, МОП-транзистор, P Канал, -1 А, -12 В, 0.08 Ом The BSH207.135 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
• Very low threshold
• Fast switching
• Logic level compatible
• -55 to 150 C Operating junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы