Характеристики
BSH202, МОП-транзистор, P Канал, -520 мА, -30 В, 0.63 Ом The BSH202 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
• Low threshold voltage
• Fast switching
• Logic level compatible
• -55 to 150 C Operating junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы