Характеристики
BSH114,215, МОП-транзистор, N Канал, 500 мА, 100 В, 0.4 Ом The BSH114.215 is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
• 150 C Junction temperature
• Low conduction losses
Полупроводники — ДискретныеТранзисторыМОП-транзисторы