Характеристики
IRGB6B60KPBF, БТИЗ транзистор, 13 А, 1.8 В, 90 Вт, 600 В The IRGB6B60KPBF is an Insulated Gate Bipolar Transistor features low VCE (on) non-punch through IGBT technology and excellent current sharing in parallel operation.
• Square RBSOA
• Positive VCE (on) temperature coefficient
• Rugged transient performance
• Low EMI
• 10µs Short-circuit capability
Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные