Характеристики
ZXMN10A11G, МОП-транзистор, N Канал, 1.8 А, 100 В, 600 мОм The ZXMN10A11G is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Low ON-resistance
• Fast switching speed
• Low gate drive
• Low input capacitance
• Halogen-free, Green device
• Qualified to AEC-Q101 standards for high reliability
• Moisture sensitivity level 1 as per J-STD-020
• UL94V-0 Flammability rating
Полупроводники — ДискретныеТранзисторыМОП-транзисторы