Характеристики
SI1013R-T1-GE3, МОП-транзистор, P Канал, -350 мА, -20 В The SI1013R-T1-GE3 is a 1.8VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
• 2000V Gate-source ESD protected
• High-side switching
• Low ON-resistance
• Low threshold
• 14ns Fast switching speed
• Halogen-free
• Ease in driving switches
• Low offset voltage
• Low-voltage operation
• High-speed circuits
• Low battery voltage operation
Полупроводники — ДискретныеТранзисторыМОП-транзисторы