Характеристики
IRLD014PBF, МОП-транзистор, N Канал, 1.7 А, 60 В, 200 мОм The IRLD014PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1W.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 C Operating temperature
• Easy to parallel
• Simple drive requirement
• For automatic insertion
• End stackable
Полупроводники — ДискретныеТранзисторыМОП-транзисторы