FDB8030L, МОП-транзистор, N Канал, 80 А, 30 В, 0.0031 Ом

Характеристики

FDB8030L, МОП-транзистор, N Канал, 80 А, 30 В, 0.0031 Ом The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster-switching and lower gate charge than other MOSFETS with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• Critical DC electrical parameters specified at elevated temperature
• High performance Trench technology for extremely low RDS (ON)

Полупроводники — ДискретныеТранзисторыМОП-транзисторы