Характеристики
BUK9Y59-60E, МОП-транзистор, N Канал, 16.7 А, 60 В The BUK9Y59-60E is a N-channel logic level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 C rating
• True logic level gate with VGS (th) rating of greater than 0.5V at 175 C
• -55 to 175 C Junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы