Микросхема MC33178DR2G

Характеристики

MC33178DR2GThe MC33178DR2G is a low power low noise monolithic dual Operational Amplifier employing bipolar technology with innovative high performance concepts. This device family incorporates the use of high frequency PNP input transistors to produce amplifiers exhibiting low input offset voltage, noise and distortion. In addition, the amplifier provides high output current drive capability while consuming only 420µA of drain current per amplifier. The NPN output stage used, exhibits no dead-band crossover distortion, large output voltage swing, excellent phase and gain margins, low open-loop high frequency output impedance, symmetrical source and sink AC frequency performance.

• Large output voltage swing
• ESD Clamps on the inputs increase ruggedness without affecting device performance
• 600R Output drive capability
• 0.15mV (mean) Low offset voltage
• 2.0µV/°C Low TC of input offset voltage
• 0.0024% Low total harmonic distortion

Микросхемы / Усилители и компараторы / Операционные усилители
Корпус: 8-SOIC N, инфо: Операционный усилитель, 5 МГц